Heisener Electronics
BOM

BST82-235

100V|190mA (Ta)|830mW (Tc)
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MOSFET N-CH 100V 190MA SOT-23

Specifications

Brand
Nexperia
Package
TO-236AB
Packaging
—
Weight
—

Total Inventory

356pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BST82-235 from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerNexperia USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds40pF @ 10V
FET Feature-
Power Dissipation (Max)830mW (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

bst82-215.pdf

PDF Document · 14 pages

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