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100V|190mA (Ta)|830mW (Tc)
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MOSFET N-CH 100V 190MA SOT-23
Specifications
- Brand
- Nexperia
- Package
- TO-236AB
- Packaging
- —
- Weight
- —
Total Inventory
12,283pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BST82-215 from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia USA Inc. | |
| Series | TrenchMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 190mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 150mA, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 830mW (Tc) | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-236AB | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Datasheet & Documents
bst82-215.pdf
PDF Document · 14 pages
