Heisener Electronics
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BSS670S2L

55V|540mA (Ta)|360mW (Ta)
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MOSFET N-CH 55V 540MA SOT-23

Specifications

Brand
Infineon Technologies
Package
SOT-23-3
Packaging
—
Weight
—

Total Inventory

402pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSS670S2L from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs2.26nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds75pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

bss670s2ll6327htsa1.pdf

PDF Document · 8 pages

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Datasheet Preview

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