BSS123L6327HTSA1
100V|170mA (Ta)|360mW (Ta)
原装正品全球货源快速交付品质认证技术支持批量优惠
MOSFET N-CH 100V 170MA SOT-23
规格参数
- 品牌
- Infineon Technologies
- 封装
- SOT-23-3
- 包装方式
- —
库存总量
211个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 Infineon Technologies 的 BSS123L6327HTSA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V | |
| Vgs(th) (Max) @ Id | 1.8V @ 50µA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.67nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 69pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 360mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-23-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
推荐产品
RES 2.1 OHM 1W 1% AXIAL
MEMS OSC XO 33.6000MHZ LVCMOS LV
CAP CER 6800PF 10V C0G/NP0 1808
CAP CER 100PF 50V C0G/NP0 0603
DC DC CONVERTER +/-3.3V 1W
INDICATOR PB BLU ILL SQ FLAT CAP
MOSFET N-CH 60V 16A DPAK
.050'' BOARD SPACERS
CONN RCPT 18POS 1.0MM
CONN RCPT HSNG FMALE 4POS PNL MT
数据手册与文档
bss123l6433htma1.pdf
PDF文档 · 7 pages
