Heisener Electronics
BOM

BSS119NH7978XTSA1

100 V|190mA (Ta)|500mW (Ta)
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SMALL SIGNAL N-CHANNEL MOSFET

Specifications

Brand
Infineon Technologies
Package
PG-SOT23-3-5
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSS119NH7978XTSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id2.3V @ 13µA
Gate Charge (Qg) (Max) @ Vgs0.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds20.9 pF @ 25 V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT23-3-5
Package / CaseTO-236-3, SC-59, SOT-23-3

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