Heisener Electronics
BOM

BSP75GQTA

60V|1.6A (Ta)|2.5W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 60V 1.6A SOT223

Specifications

Brand
Diodes Incorporated
Package
SOT-223
Packaging
—
Weight
—

Total Inventory

180pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSP75GQTA from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs550mOhm @ 700mA, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

Recommended Products

RWR89S1651FRB12

RWR89S1651FRB12

RES 1.65K OHM 3W 1% WW AXIAL

SIT9003AI-13-33SB-6-78000Y

SIT9003AI-13-33SB-6-78000Y

MEMS OSC XO 6.7800MHZ LVCM LVTTL

1808J2000124MDT

1808J2000124MDT

CAP CER 0.12UF 200V X7R 1808

1210Y5000392MXT

1210Y5000392MXT

CAP CER 3900PF 500V X7R 1210

E2E-X10MB1D12-2M

E2E-X10MB1D12-2M

SENSOR INDUCT 10MM PNP M12 NO

HSCDRRD006MD2A3

HSCDRRD006MD2A3

BRD MNT PRESSURE SENSORS

V28B48H150BL2

V28B48H150BL2

DC DC CONVERTER 48V 150W

0387291253

0387291253

CONN BARRIER STRIP 5CIRC 0.375"

DW-20-19-F-D-660

DW-20-19-F-D-660

.025" BOARD SPACERS

Datasheet & Documents

bsp75gqta.pdf

PDF Document · 8 pages

Download

Datasheet Preview

Download