BSP613P

60V|2.9A (Ta)|1.8W (Ta)

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MOSFET P-CH 60V 2.9A SOT-223

361pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	Infineon Technologies
Series	SIPMOS®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	875pF @ 25V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223-4
Package / Case	TO-261-4, TO-261AA