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200V|660mA (Ta)|1.8W (Ta)
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MOSFET N-CH 200V 660MA SOT-223
Specifications
- Brand
- Infineon Technologies
- Package
- PG-SOT223-4
- Packaging
- —
- Weight
- —
Total Inventory
134pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BSP149L6327HTSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V | |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V | |
| Vgs(th) (Max) @ Id | 1V @ 400µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V | |
| FET Feature | Depletion Mode | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT223-4 | |
| Package / Case | TO-261-4, TO-261AA |
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