Heisener Electronics
BOM

BSP135L6327HTSA1

600V|120mA (Ta)|1.8W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600V 120MA SOT-223

Specifications

Brand
Infineon Technologies
Package
PG-SOT223-4
Packaging
—
Weight
—

Total Inventory

292pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSP135L6327HTSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)0V, 10V
Rds On (Max) @ Id, Vgs45Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id1V @ 94µA
Gate Charge (Qg) (Max) @ Vgs4.9nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds146pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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