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BSP123L6327HTSA1

100V|370mA (Ta)|1.79W (Ta)
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MOSFET N-CH 100V 370MA SOT223

Specifications

Brand
Infineon Technologies
Package
PG-SOT223-4
Packaging
—
Weight
—

Total Inventory

270pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSP123L6327HTSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C370mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.8V, 10V
Rds On (Max) @ Id, Vgs6Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id1.8V @ 50µA
Gate Charge (Qg) (Max) @ Vgs2.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds70pF @ 25V
FET Feature-
Power Dissipation (Max)1.79W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-SOT223-4
Package / CaseTO-261-4, TO-261AA

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Datasheet & Documents

bsp123e6327t.pdf

PDF Document · 8 pages

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