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60V|3.1A, 2A|2W
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MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Specifications
- Brand
- Infineon Technologies
- Package
- 8-SOIC (0.154", 3.90mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
302pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BSO615CT from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | SIPMOS® | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 20µA | |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V | |
| Power - Max | 2W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | PG-DSO-8 |
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Datasheet & Documents
bso615ct.pdf
PDF Document · 13 pages
