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Send MessageBSM25GD120DN2BOSA1
1200V|35A|200W
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IGBT 2 LOW POWER ECONO2-2
Specifications
- Brand
- Infineon Technologies
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
376pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BSM25GD120DN2BOSA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| IGBT Type | - | |
| Configuration | Full Bridge | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 35A | |
| Power - Max | 200W | |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A | |
| Current - Collector Cutoff (Max) | 800µA | |
| Input Capacitance (Cies) @ Vce | 1.65nF @ 25V | |
| Input | Standard | |
| NTC Thermistor | No | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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