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1200V (1.2kV)|120A (Tc)|780W
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MOSFET 2N-CH 1200V 120A MODULE
Specifications
- Brand
- Rohm Semiconductor
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
527pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BSM120D12P2C005 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | 2.7V @ 22mA | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 10V | |
| Power - Max | 780W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | - | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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Datasheet & Documents
bsm120d12p2c005.pdf
PDF Document · 9 pages
