Heisener Electronics
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BSD223P

20V|390mA|250mW
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MOSFET 2P-CH 20V 0.39A SOT363

Specifications

Brand
Infineon Technologies
Package
6-VSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

451pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSD223P from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C390mA
Rds On (Max) @ Id, Vgs1.2Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1.5µA
Gate Charge (Qg) (Max) @ Vgs0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds56pF @ 15V
Power - Max250mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-6

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Datasheet & Documents

bsd223p-l6327.pdf

PDF Document · 8 pages

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Datasheet Preview

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