Heisener Electronics
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BSC205N10LS-G

100V|7.4A (Ta), 45A (Tc)|76W (Tc)
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MOSFET N-CH 100V 45A TDSON-8

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8-1
Packaging
—
Weight
—

Total Inventory

185pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSC205N10LS-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C7.4A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs20.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 50V
FET Feature-
Power Dissipation (Max)76W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

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Datasheet & Documents

bsc205n10ls-g.pdf

PDF Document · 10 pages

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