Heisener Electronics
BOM

BSC152N15LS5ATMA1

150 V|8.9A (Ta), 55A (Tc)|2.5W (Ta), 96W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8
Packaging
—
Weight
—

Total Inventory

11,970pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSC152N15LS5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C8.9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15.2mOhm @ 29A, 10V
Vgs(th) (Max) @ Id2.3V @ 60µA
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 75 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8
Package / Case8-PowerTDFN

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