Heisener Electronics
BOM

BSC080N12LSGATMA1

120 V|12A (Ta), 99A (Tc)|156W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH >=100V PG-TDSON-8

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8
Packaging
—
Weight
—

Total Inventory

7,608pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSC080N12LSGATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120 V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2.4V @ 112µA
Gate Charge (Qg) (Max) @ Vgs79 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7400 pF @ 60 V
FET Feature-
Power Dissipation (Max)156W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8
Package / Case8-PowerTDFN

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