Heisener Electronics
BOM

BSC0803LSATMA1

100 V|10A (Ta), 44A (Tc)|2.5W (Ta), 52W (Tc)
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MOSFET N-CH 100V 10A/44A TDSON-6

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8-6
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSC0803LSATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™ 5
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs14.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.3V @ 23µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-6
Package / Case8-PowerTDFN

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