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BSC059N04LSGATMA1

40V|16A (Ta), 73A (Tc)|2.5W (Ta), 50W (Tc)

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MOSFET N-CH 40V 73A TDSON-8

Specifications

Brand: Infineon Technologies
Package: PG-TDSON-8-5
Packaging: —
Weight: —

Total Inventory

42,080pcs

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Purchase Quantity

MOQ: 1 pcs

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Discover how BSC059N04LSGATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Manufacturer	Infineon Technologies
Series	OptiMOS™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-5
Package / Case	8-PowerTDFN

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BSC059N04LSGATMA1

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