BSC011N03LSIATMA1

30V|37A (Ta), 100A (Tc)|2.5W (Ta), 96W (Tc)

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MOSFET N-CH 30V 37A TDSON-8

54,128个

12小时发货

购买数量

起订量：1 个

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了解 Infineon Technologies 的 BSC011N03LSIATMA1 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

Manufacturer	Infineon Technologies
Series	OptiMOS™
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-7
Package / Case	8-PowerTDFN