Heisener Electronics
BOM

BSC010NE2LSIATMA1

25V|38A (Ta), 100A (Tc)|2.5W (Ta), 96W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 25V 38A TDSON-8

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8-7
Packaging
—
Weight
—

Total Inventory

44,895pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSC010NE2LSIATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.05mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4200pF @ 12V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 96W (Tc)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-7
Package / Case8-PowerTDFN

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