BSC010NE2LSI

25V|38A (Ta), 100A (Tc)|2.5W (Ta), 96W (Tc)

原装正品全球货源快速交付品质认证技术支持批量优惠

MOSFET N-CH 25V 38A TDSON-8

900,984个

12小时发货

购买数量

起订量：1 个

产品视频

了解 Infineon Technologies 的 BSC010NE2LSI 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。

Manufacturer	Infineon Technologies
Series	OptiMOS?
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.05 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 12V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN