Heisener Electronics
BOM

BSC004NE2LS5ATMA1

25 V|40A (Ta), 479A (Tc)|2.5W (Ta), 188W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRENCH <= 40V

Specifications

Brand
Infineon Technologies
Package
PG-TDSON-8
Packaging
—
Weight
—

Total Inventory

10,230pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSC004NE2LS5ATMA1 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C40A (Ta), 479A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.45mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs238 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 12.5 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 188W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8
Package / Case8-PowerTDFN

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