Heisener Electronics
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BSB053N03LP-G

30V|17A (Ta), 71A (Tc)|2.3W (Ta), 42W (Tc)
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MOSFET N-CH 30V 71A 2WDSON

Specifications

Brand
Infineon Technologies
Package
MG-WDSON-2, CanPAK M™
Packaging
—
Weight
—

Total Inventory

416pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BSB053N03LP-G from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 15V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMG-WDSON-2, CanPAK M™
Package / Case3-WDSON

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Datasheet & Documents

bsb053n03lp-g.pdf

PDF Document · 11 pages

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