Heisener Electronics
BOM

BS107G

200V|250mA (Ta)|350mW (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 200V 0.25A TO-92

Specifications

Brand
ON Semiconductor
Package
TO-92-3
Packaging
—
Weight
—

Total Inventory

125pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BS107G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.6V, 10V
Rds On (Max) @ Id, Vgs14Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA)

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Datasheet & Documents

bs107g.pdf

PDF Document · 4 pages

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Datasheet Preview

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