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4.5V|110 @ 30mA, 3V|200mW
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RF BIPOLAR TRANSISTOR
Specifications
- Brand
- Infineon Technologies
- Package
- SC-82A, SOT-343
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BFP640E6327 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V | |
| Frequency - Transition | 40GHz | |
| Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz | |
| Gain | 24dB | |
| Power - Max | 200mW | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V | |
| Current - Collector (Ic) (Max) | 50mA | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Supplier Device Package | PG-SOT343-4 |
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