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100V|10A|125W
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TRANS NPN DARL 100V 10A TO247
Specifications
- Brand
- ON Semiconductor
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
621pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BDV65BG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 10A | |
| Voltage - Collector Emitter Breakdown (Max) | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A | |
| Current - Collector Cutoff (Max) | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V | |
| Power - Max | 125W | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 |
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Datasheet & Documents
bdv65b.pdf
PDF Document · 7 pages
