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Send MessageBC879-112
80V|1A|830mW
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TRANS NPN DARL 80V 1A TO-92
Specifications
- Brand
- NXP
- Package
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging
- —
- Weight
- —
Total Inventory
292pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BC879-112 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 1A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1mA, 1A | |
| Current - Collector Cutoff (Max) | 50nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 500mA, 10V | |
| Power - Max | 830mW | |
| Frequency - Transition | 200MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Supplier Device Package | TO-92-3 |
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Datasheet & Documents
bc875-126.pdf
PDF Document · 7 pages
