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65 V|100 mA|340 mW
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SMALL SIGNAL BIPOLAR IN DFN PACK
Specifications
- Brand
- Nexperia
- Package
- 3-XDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
14,970pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BC856BQBZ from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia | |
| Series | BC856xQB | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 100 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 65 V | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V | |
| Power - Max | 340 mW | |
| Frequency - Transition | 100MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Package / Case | 3-XDFN Exposed Pad | |
| Supplier Device Package | DFN1110D-3 |
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