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65 V|100 mA|330 mW
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BIPOLAR GEN PURPOSE TRANSISTOR
Specifications
- Brand
- Infineon Technologies
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BC856AE6327 from Infineon Technologies fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Infineon Technologies | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 100 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 65 V | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 125 @ 2mA, 5V | |
| Power - Max | 330 mW | |
| Frequency - Transition | 250MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | PG-SOT23-3-1 |
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