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60 V|1 A|420 mW
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POWER BJTS IN DFN
Specifications
- Brand
- Nexperia
- Package
- 3-UDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
9,000pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BC55-10PAS-QX from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia | |
| Series | BC55xPAS-Q | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 1 A | |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V | |
| Power - Max | 420 mW | |
| Frequency - Transition | 180MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-UDFN Exposed Pad | |
| Supplier Device Package | DFN2020D-3 |
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