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80V|1A|625mW
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TRANS NPN DARL 80V 1A TO-92
Specifications
- Brand
- ON Semiconductor
- Package
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging
- —
- Weight
- —
Total Inventory
134pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BC373RL1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 1A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 1.1V @ 250µA, 250mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V | |
| Power - Max | 625mW | |
| Frequency - Transition | 200MHz | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Supplier Device Package | TO-92-3 |
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Datasheet & Documents
bc373rl1g.pdf
PDF Document · 4 pages
