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BC372G

100V|1A|625mW
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TRANS NPN DARL 100V 1A TO-92

Specifications

Brand
ON Semiconductor
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
—
Weight
—

Total Inventory

254pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BC372G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.1V @ 250µA, 250mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Power - Max625mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3

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Datasheet & Documents

bc373rl1g.pdf

PDF Document · 4 pages

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