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30 V|200mA
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DIODE SCHOT 30V 200MA DFN1110D-3
Specifications
- Brand
- Nexperia
- Package
- 3-XDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BAT54QBZ from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia | |
| Series | - | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 30 V | |
| Current - Average Rectified (Io) | 200mA | |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 100 mA | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Reverse Recovery Time (trr) | 5 ns | |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V | |
| Capacitance @ Vr, F | 10pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Package / Case | 3-XDFN Exposed Pad | |
| Supplier Device Package | DFN1110D-3 | |
| Operating Temperature - Junction | 150°C |
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