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100V|250mA
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DIODE GEN PURP 100V 250MA USC
Specifications
- Brand
- Toshiba Semiconductor and Storage
- Package
- SC-76, SOD-323
- Packaging
- —
- Weight
- —
Total Inventory
421pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BAS316-H3F from Toshiba Semiconductor and Storage fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Current - Average Rectified (Io) | 250mA | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 3ns | |
| Current - Reverse Leakage @ Vr | 200nA @ 80V | |
| Capacitance @ Vr, F | 0.35pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-76, SOD-323 | |
| Supplier Device Package | USC | |
| Operating Temperature - Junction | 150°C (Max) |
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