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Send MessageBAS21HYFHT116
200 V|200mA
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DIODE GEN PURP 200V 200MA SOT23
Specifications
- Brand
- Rohm Semiconductor
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
7,560pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how BAS21HYFHT116 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Current - Average Rectified (Io) | 200mA | |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 200 mA | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Reverse Recovery Time (trr) | 50 ns | |
| Current - Reverse Leakage @ Vr | 100 nA @ 200 V | |
| Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23 | |
| Operating Temperature - Junction | 150°C |
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