Heisener Electronics
BOM

BAS16HYFHT116

80 V|215mA
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

DIODE GEN PURP 80V 215MA SOT23

Specifications

Brand
Rohm Semiconductor
Package
TO-236-3, SC-59, SOT-23-3
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how BAS16HYFHT116 from Rohm Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerRohm Semiconductor
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)80 V
Current - Average Rectified (Io)215mA
Voltage - Forward (Vf) (Max) @ If1.25 V @ 150 mA
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)4 ns
Current - Reverse Leakage @ Vr500 nA @ 80 V
Capacitance @ Vr, F2pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
Operating Temperature - Junction150°C

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