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200V|900mA
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BRIDGE RECT 1P 200V 900MA DFM
Specifications
- Brand
- Vishay Semiconductor Diodes Division
- Package
- 4-EDIP (0.300", 7.62mm)
- Packaging
- —
- Weight
- —
Total Inventory
407pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how B125C800DM-E3-45 from Vishay Semiconductor Diodes Division fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Vishay Semiconductor Diodes Division | |
| Series | - | |
| Diode Type | Single Phase | |
| Technology | Standard | |
| Voltage - Peak Reverse (Max) | 200V | |
| Current - Average Rectified (Io) | 900mA | |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 900mA | |
| Current - Reverse Leakage @ Vr | 10µA @ 200V | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 4-EDIP (0.300", 7.62mm) | |
| Supplier Device Package | DFM |
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Datasheet & Documents
b125c800dm-e3-45.pdf
PDF Document · 4 pages
