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ATP112-TL-H

60V|25A (Ta)|40W (Tc)
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MOSFET P-CH 60V 25A ATPAK

Specifications

Brand
ON Semiconductor
Package
ATPAK
Packaging
—
Weight
—

Total Inventory

477pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ATP112-TL-H from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs43mOhm @ 13A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs33.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1450pF @ 20V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageATPAK
Package / CaseATPAK (2 leads+tab)

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Datasheet & Documents

atp112-tl-h.pdf

PDF Document · 7 pages

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