Heisener Electronics
BOM

ATP101-TL-HX

30V|25A (Ta)|30W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET P-CH DPAK

Specifications

Brand
ON Semiconductor
Package
ATPAK
Packaging
—
Weight
—

Total Inventory

289pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how ATP101-TL-HX from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs30mOhm @ 13A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs18.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds875pF @ 10V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageATPAK
Package / CaseATPAK (2 leads+tab)

Recommended Products

H8178RBYA

H8178RBYA

RES 178 OHM 1/4W 0.1% AXIAL

ERJ-S06J331V

ERJ-S06J331V

RES SMD 330 OHM 5% 1/8W 0805

SIT9005ACB7G-28NA

SIT9005ACB7G-28NA

MEMS OSC PRG SSXO LVCMOS DS 2.8V

CDR32BP151BFURAB

CDR32BP151BFURAB

CAP CER 150PF 100V BP 1206

1210Y0630154JDR

1210Y0630154JDR

CAP CER 0.15UF 63V X7R 1210

SM6T36A-E3-52

SM6T36A-E3-52

TVS DIODE 30.8V 49.9V DO214AA

PDI-E907

PDI-E907

EMITTER IR 940NM 100MA TO-46

3-146466-9

3-146466-9

39 MODII HDR SRST UNSHRD STKG

09562615700

09562615700

CONN DSUB HD PLUG 26P VERT SLDR

D38999-20TE2PA-LC

D38999-20TE2PA-LC

CONN RCPT HSNG MALE 39POS PNL MT