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1200V (1.2kV)|337A (Tc)|2140W
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POWER MODULE - SIC
Specifications
- Brand
- Microsemi
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
120pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTSM120AM14CD3AG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| FET Type | 2 N-Channel (Dual), Schottky | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 337A (Tc) | |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 180A, 20V | |
| Vgs(th) (Max) @ Id | 3V @ 9mA | |
| Gate Charge (Qg) (Max) @ Vgs | 1224nC @ 20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 1000V | |
| Power - Max | 2140W | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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