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APTSM120AM09CD3AG

1200V (1.2kV)|337A (Tc)|-
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MOSFET 2 N-CH 1200V 337A MODULE

Specifications

Brand
Microsemi
Package
Module
Packaging
—
Weight
—

Total Inventory

176pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTSM120AM09CD3AG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C337A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 180A, 20V
Vgs(th) (Max) @ Id3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 1000V
Power - Max-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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