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1200V (1.2kV)|219A (Tc)|925W
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MOSFET 4N-CH 1200V 219A SP6C
Specifications
- Brand
- Microsemi
- Package
- SP6
- Packaging
- —
- Weight
- —
Total Inventory
304pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTMC60TLM14CAG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| FET Type | 4 N-Channel (Three Level Inverter) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 219A (Tc) | |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 150A, 20V | |
| Vgs(th) (Max) @ Id | 2.4V @ 30mA (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | 483nC @ 20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 1000V | |
| Power - Max | 925W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP6 | |
| Supplier Device Package | SP6 |
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