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1200V (1.2kV)|250A (Tc)|1100W
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MOSFET 2N-CH 1200V 250A D3
Specifications
- Brand
- Microsemi
- Package
- D-3 Module
- Packaging
- —
- Weight
- —
Total Inventory
350pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how APTMC120AM08CD3AG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| FET Type | 2 N-Channel (Half Bridge) | |
| FET Feature | Silicon Carbide (SiC) | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 250A (Tc) | |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 200A, 20V | |
| Vgs(th) (Max) @ Id | 2.2V @ 10mA (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | 490nC @ 20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9500pF @ 1000V | |
| Power - Max | 1100W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | D-3 Module | |
| Supplier Device Package | D3 |
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