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APTM50DHM35G

500V|99A|781W
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MOSFET 2N-CH 500V 99A SP6

Specifications

Brand
Microsemi
Package
SP6
Packaging
—
Weight
—

Total Inventory

118pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM50DHM35G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Dual) Asymmetrical
FET FeatureStandard
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C99A
Rds On (Max) @ Id, Vgs39mOhm @ 49.5A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds14000pF @ 25V
Power - Max781W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP6
Supplier Device PackageSP6

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Datasheet & Documents

aptm50dhm35g.pdf

PDF Document · 6 pages

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