Heisener Electronics
BOM

APTM50DAM19G

500V|163A (Tc)|1136W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 500V 163A SP6

Specifications

Brand
Microsemi
Package
SP6
Packaging
—
Weight
—

Total Inventory

320pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM50DAM19G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C163A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs22.5mOhm @ 81.5A, 10V
Vgs(th) (Max) @ Id5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs492nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds22400pF @ 25V
FET Feature-
Power Dissipation (Max)1136W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

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