Heisener Electronics
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APTM20DAM08TG

200V|208A (Tc)|781W (Tc)
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MOSFET N-CH 200V 208A SP4

Specifications

Brand
Microsemi
Package
SP4
Packaging
—
Weight
—

Total Inventory

173pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM20DAM08TG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C208A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 104A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs280nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds14400pF @ 25V
FET Feature-
Power Dissipation (Max)781W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP4
Package / CaseSP4

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