Heisener Electronics
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APTM20DAM04G

200V|372A (Tc)|1250W (Tc)
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MOSFET N-CH 200V 372A SP6

Specifications

Brand
Microsemi
Package
SP6
Packaging
—
Weight
—

Total Inventory

276pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM20DAM04G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C372A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5mOhm @ 186A, 10V
Vgs(th) (Max) @ Id5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs560nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds28900pF @ 25V
FET Feature-
Power Dissipation (Max)1250W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

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