Heisener Electronics
BOM

APTM20AM10STG

200V|175A|694W
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MOSFET 2N-CH 200V 175A SP4

Specifications

Brand
Microsemi
Package
SP4
Packaging
—
Weight
—

Total Inventory

171pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM20AM10STG from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C175A
Rds On (Max) @ Id, Vgs12mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds13700pF @ 25V
Power - Max694W
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseSP4
Supplier Device PackageSP4

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