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APTM120SK56T1G

1200V|18A (Tc)|390W (Tc)
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MOSFET N-CH 1200V 18A SP1

Specifications

Brand
Microsemi
Package
SP1
Packaging
—
Weight
—

Total Inventory

491pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how APTM120SK56T1G from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7736pF @ 25V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

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Datasheet & Documents

aptm120sk56t1g.pdf

PDF Document · 6 pages

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